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BLF522

Advanced Semiconductor ยท Modules

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Advanced Semiconductor BLF522

Advanced Semiconductor BLF522 overview

Advanced Semiconductor Inc BLF522 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:Single, Number of Terminal...

Manufactured byAdvanced Semiconductor
Part number or familyBLF522
Product groupModules

Product details

Manufactured byAdvanced Semiconductor
Product groupModules
DescriptionAdvanced Semiconductor Inc BLF522 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:Single, Number of Terminals:6, DS Breakdown Voltage-Min:50 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Drain Current-Max (Abs) (ID):1.8 A, Drain Current-Max (ID):1.6 A

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Manufactured by Advanced Semiconductor View Advanced Semiconductor profile
Product group Modules Explore Modules Explore Transistor Explore RF Power Field-effect Transistors
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