Advanced Power Electronics Corp AP4232AGM overview
Advanced Power Electronics Corp AP4232AGM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WI...
Product details
Manufactured byAdvanced Power Electronics Corp
Product groupModules
DescriptionAdvanced Power Electronics Corp AP4232AGM Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (ID):7.8 A,Drain-source On Resistance-Max:23 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Advanced Power Electronics Corp
View Advanced Power Electronics Corp profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request