Advanced Power Electronics Corp AP3N1R8MT overview
AP3N1R8MT is made by Advanced Power Electronics Corp. Advanced Power Electronics Corp AP3N1R8MT Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):100 A,Drain-source On…
Manufactured byAdvanced Power Electronics Corp
Part number or familyAP3N1R8MT
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Manufactured byAdvanced Power Electronics Corp
DescriptionAdvanced Power Electronics Corp AP3N1R8MT Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):100 A,Drain-source On Resistance-Max:3.6 m?
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Advanced Power Electronics Corp
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