Advanced Power Electronics Corp AP30N30W overview
AP30N30W is made by Advanced Power Electronics Corp. Advanced Power Electronics Corp AP30N30W Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (ID):36…
Manufactured byAdvanced Power Electronics Corp
Part number or familyAP30N30W
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Manufactured byAdvanced Power Electronics Corp
DescriptionAdvanced Power Electronics Corp AP30N30W Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:250 V,Number of Elements:1,Drain Current-Max (ID):36 A,Drain-source On Resistance-Max:68 m?
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Advanced Power Electronics Corp
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