Advanced Power Electronics Corp AP2301BGN-HF overview
AP2301BGN-HF is made by Advanced Power Electronics Corp. Advanced Power Electronics Corp AP2301BGN-HF Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max…
Manufactured byAdvanced Power Electronics Corp
Part number or familyAP2301BGN-HF
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Manufactured byAdvanced Power Electronics Corp
DescriptionAdvanced Power Electronics Corp AP2301BGN-HF Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:20 V,Number of Elements:1,Drain Current-Max (ID):2.8 A,Drain-source On Resistance-Max:130 m?
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