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AP1RC03GMT-HF

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Advanced Power Electronics Corp AP1RC03GMT-HF

Advanced Power Electronics Corp AP1RC03GMT-HF overview

Advanced Power Electronics Corp AP1RC03GMT-HF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-I...

Part number or familyAP1RC03GMT-HF
Product groupModules

Product details

Manufactured byAdvanced Power Electronics Corp
Product groupModules
DescriptionAdvanced Power Electronics Corp AP1RC03GMT-HF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):170 A,Drain-source On Resistance-Max:1.8 m?

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Manufactured by Advanced Power Electronics Corp View Advanced Power Electronics Corp profile
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