Advanced Power Electronics Corp AP1R803GMT-HF overview
Advanced Power Electronics Corp AP1R803GMT-HF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-I...
Manufactured byAdvanced Power Electronics Corp
Part number or familyAP1R803GMT-HF
Product groupModules
Product details
Manufactured byAdvanced Power Electronics Corp
Product groupModules
DescriptionAdvanced Power Electronics Corp AP1R803GMT-HF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:5,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (ID):170 A,Drain-source On Resistance-Max:1.9 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Advanced Power Electronics Corp
View Advanced Power Electronics Corp profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request