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AP1A003GMT-HF

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Advanced Power Electronics Corp AP1A003GMT-HF

Advanced Power Electronics Corp AP1A003GMT-HF overview

Advanced Power Electronics Corp AP1A003GMT-HF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-I...

Part number or familyAP1A003GMT-HF
Product groupModules

Product details

Manufactured byAdvanced Power Electronics Corp
Product groupModules
DescriptionAdvanced Power Electronics Corp AP1A003GMT-HF Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain-source On Resistance-Max:2.2 m?

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